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The effect of YSi 2 nanoinclusion on the thermoelectric properties of p‐type SiGe alloy
Author(s) -
Wongprakarn Suphagrid,
Pinitsoontorn Supree,
Tanusilp Soraat,
Kurosaki Ken
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700235
Subject(s) - spark plasma sintering , thermoelectric effect , materials science , microstructure , thermal conductivity , alloy , nanocomposite , melt spinning , seebeck coefficient , electrical resistivity and conductivity , thermoelectric materials , figure of merit , composite material , optoelectronics , spinning , electrical engineering , thermodynamics , physics , engineering
In this research, the p‐type Si 80 Ge 20 B 3 alloys composited with YSi 2 nanoinclusions were fabricated by melting spinning and then, spark plasma sintering. The metallic Y was chosen as the source of YSi 2 nanoparticles. It was found that the fully dense nanocomposites were formed with the homogeneous distribution of YSi 2 nanoinclusions in the SiGe matrix. The thermoelectric measurement showed that YSi 2 addition reduces the electrical conductivity but increases the Seebeck coefficient, which was attributed to the decrease in carrier concentration. The thermal conductivity was suppressed for the composite SiGe‐1.4%Y, which made this composition to exhibit the largest thermoelectric figure‐of‐merit (ZT) of 0.52. Figure‐of‐merit (ZT) and microstructure of the SiGe‐ x %Y SiGe‐1.4%Y.

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