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Evaluating extrinsic origin of frequency dispersion of measured capacitance in high‐ k mixed stacks
Author(s) -
StojanovskaGeorgievska Lihnida
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700215
Subject(s) - capacitance , equivalent series resistance , conductance , dielectric , capacitor , dispersion (optics) , materials science , high κ dielectric , series (stratigraphy) , condensed matter physics , equivalent circuit , analytical chemistry (journal) , optoelectronics , chemistry , electrical engineering , physics , electrode , optics , voltage , engineering , chromatography , quantum mechanics , paleontology , biology
As an inherent phenomenon of high‐ k dielectrics frequency dispersion FD of electrical characteristics if often observed. The assessment of FD, despite as intrinsic property of the dielectric constant, should take into account the effects from extrinsic origin, such as the effects of the interfacial layer and series resistance. In this paper, FD of the measured capacitance and conductance of MOS capacitors containing high‐ k Ta 2 O 5 ‐HfO 2 mixed stacks was analyzed in terms of major extrinsic causes. There are several methods for correction for the effect of series resistance and interface states. Our assessment of FD was done based on the four‐element circuit model, performing corrections for both extrinsic effects. The values for D IT of the order of 10 12 eV −1 cm −2 were extracted using both standard conductance method and high‐low capacitance method, which were than compared. A model was finally summarized into analytical expression for C ‐ f , enabling determination of basic parameters of tested structures.