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Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans‐Conductance Coefficient by Adopting Double‐Layered Al 2 O 3 /SiN x Gate Insulator
Author(s) -
Kim Yujin,
Lee KwangHeum,
Mun Geumbi,
Park Kyeongwoo,
Park SangHee Ko
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700183
Subject(s) - thin film transistor , materials science , conductance , hysteresis , transistor , electrode , field effect , analytical chemistry (journal) , optoelectronics , electrical engineering , condensed matter physics , voltage , chemistry , nanotechnology , physics , layer (electronics) , engineering , chromatography
Gate insulator (GI) materials in top gate structured InGaZnO thin‐film transistor (TFT) with copper gate electrode are examined for the application to the large area display. To overcome the problems with hydrogen diffusion, which can influence the number of carriers in oxide semiconductor and to gain large trans‐conductance coefficient, a double‐layered GI of 30 nm Al 2 O 3 /120 nm SiN x is adopted. The TFT showed field‐effect mobility, V on , SS , and hysteresis of 12.8 cm 2 V −1 s −1 , −0.7 V, 0.17 V decade −1 , and almost 0 V, respectively, and the ΔVon under the positive bias stress of 20 V and negative bias stress of −20 V at 60 C for 10 000 s are +0.1 and −0.4 V, respectively.