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Characteristic Luminescence Correlated with Leaky Diamond Schottky Barrier Diodes
Author(s) -
Shimaoka Takehiro,
Teraji Tokuyuki,
Watanabe Kenji,
Koizumi Satoshi
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700180
Subject(s) - cathodoluminescence , luminescence , diode , materials science , schottky barrier , optoelectronics , diamond , schottky diode , electrode , chemistry , composite material
This paper reports correlation between reverse current ( I R ) of diamond Schottky barrier diodes (SBDs) and luminescence feature. p‐Type vertical SBDs were characterized by current–voltage and cathodoluminescence (CL) measurements. From an exciton image taken at the electrode deposited area, non‐luminescence spots with number density of 10 4 –10 5 cm −2 were confirmed. No marked relation was found between the density of non‐luminescence spots and I R . A larger I R of >10 −5 A was observed when an electrode was deposited on an area that showed bright Band‐A luminescence spots in the CL image. In addition, diodes on the belt‐shaped luminescence in the Green‐band image showed large I R .