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Formation of p‐n Junction in a‐Se Thin Film and Its Application to High Sensitivity Photodetector Driven by Diamond Cold Cathode
Author(s) -
Masuzawa Tomoaki,
Ohata Akinori,
John Joshua D.,
Saito Ichitaro,
Yamada Takatoshi,
Chua Daniel H. C.,
Neo Yoichiro,
Mimura Hidenori,
Okano Ken
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700161
Subject(s) - photodetector , materials science , optoelectronics , sensitivity (control systems) , amorphous solid , quantum efficiency , diamond , thin film , cathode , optics , nanotechnology , chemistry , physics , electronic engineering , composite material , organic chemistry , engineering
In this study, photoconductor made of amorphous selenium (a‐Se) is studied to improve a sensitivity of vacuum‐tube type photodetectors. An electrochemical process was applied to a‐Se films to form a p‐n structure within the film. The formation of p‐n structure was confirmed by time‐of‐flight secondary ion mass spectroscopy as well as its electronic property. The a‐Se film was then combined into a prototype photodetector, and enhancement of sensitivity was evaluated in terms of nominal quantum efficiency and signal‐to‐noise ratio. The results showed that the formation of a p‐n junction within a‐Se film increased the sensitivity of the photodetector, especially at relatively low operation voltages.