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Uniform photoresponse in thermally oxidized Ni and MoS 2 heterostructures
Author(s) -
Luo Wei,
Peng Gang,
Wang Fei,
Miao Feng,
Zhang XueAo,
Qin Shiqiao
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700151
Subject(s) - heterojunction , photocurrent , materials science , optoelectronics , nanometre , photodetector , molybdenum , molybdenum disulfide , quantum efficiency , layer (electronics) , non blocking i/o , electrical conductor , nanotechnology , chemistry , composite material , metallurgy , biochemistry , catalysis
Non‐uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS 2 ) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO x layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS 2 /NiO x /Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors.