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Spontaneous delamination via compressive buckling facilitates large‐scale β‐Ga 2 O 3 thin film transfer from reusable GaAs substrates
Author(s) -
Kaya Ahmet,
Dryden Daniel M.,
Woodall Jerry M.,
Islam M. Saif
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700102
Subject(s) - materials science , thin film , delamination (geology) , raman spectroscopy , optoelectronics , fabrication , band gap , scanning electron microscope , nanoscopic scale , thermal transfer , composite material , nanotechnology , optics , layer (electronics) , medicine , paleontology , physics , alternative medicine , pathology , biology , subduction , tectonics
The fabrication and transfer via spontaneous delamination of large‐area, high‐quality β‐Ga 2 O 3 nanoscale thin films with centimeter‐scale dimensions is demonstrated via thermal oxidation of reusable GaAs substrates. The films are characterized by using X‐ray diffraction, energy dispersive spectroscopy, Raman spectroscopy, and scanning electron microscopy. The film demonstrates good mechanical flexibility facilitating reliable transfer. The β‐Ga 2 O 3 film's optical band gap and Schottky barrier height with gold are 4.8 and 1.03 eV, respectively. Electrical and optical properties of the transferable β‐Ga 2 O 3 thin films exhibit a potential for application in solar‐blind photodetectors. The scale of the β‐Ga 2 O 3 films transferred herein exceeds what the research community has reported to‐date by more than four orders of magnitude. The macroscopic dimensions of the transferred films may offer a remedy for the low thermal conductance of β‐Ga 2 O 3 via transfer onto substrates with high thermal conductivity.