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Highly improved charge injection in pentacene‐based organic transistors by chemically doping with copper iodide interlayer
Author(s) -
Chen Xiong,
Wei Xicheng,
Zhang Hao,
Wang Jun
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700064
Subject(s) - pentacene , materials science , contact resistance , electrode , copper , iodide , optoelectronics , transistor , organic field effect transistor , semiconductor , doping , field effect transistor , organic semiconductor , layer (electronics) , thin film transistor , nanotechnology , chemistry , inorganic chemistry , voltage , electrical engineering , engineering , metallurgy
We have fabricated pentacene‐based transistors by inserting an ultrathin copper iodide (CuI) layer between the semiconductor and Cu electrodes, which exhibits an enhanced field effect mobilities from 0.39 to 1.27 cm 2 Vs −1 as compared to those with the conventional Au electrodes. The enhancements are attributed to the significantly reduced contact resistance, which is believed to originate from a more favorable energy level alignment and better contact properties by introducing the CuI layer. Moreover, charge‐transfer complexes formed at the interface of the CuI and pentacene are also considered to be responsible for the improved field effect mobility. The experimentally observed results provide an appealing alternative for the optimization of the performance of OFETs with low‐cost electrodes.