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Thermal annealing effect on β‐Ga 2 O 3 thin film solar blind photodetector heteroepitaxially grown on sapphire substrate
Author(s) -
Rafique Subrina,
Han Lu,
Zhao Hongping
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700063
Subject(s) - materials science , thin film , annealing (glass) , sapphire , chemical vapor deposition , optoelectronics , photodetector , oxygen , gallium , metalorganic vapour phase epitaxy , epitaxy , analytical chemistry (journal) , optics , nanotechnology , chemistry , metallurgy , laser , physics , organic chemistry , layer (electronics) , chromatography
This paper presents the effect of thermal annealing on β‐Ga 2 O 3 thin film solar‐blind (SB) photodetector (PD) synthesized on c‐plane sapphire substrates by a low pressure chemical vapor deposition (LPCVD). The thin films were synthesized using high purity gallium (Ga) and oxygen (O 2 ) as source precursors. The annealing was performed ex situ the under the oxygen atmosphere, which helped to reduce oxygen or oxygen‐related vacancies in the thin film. Metal/semiconductor/metal (MSM) type photodetectors were fabricated using both the as‐grown and annealed films. The PDs fabricated on the annealed films had lower dark current, higher photoresponse and improved rejection ratio ( R 250 / R 370 and R 250 / R 405 ) compared to the ones fabricated on the as‐grown films. These improved PD performances are due to the significant reduction of the photo‐generated carriers trapped by oxygen or oxygen‐related vacancies.