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On the recombination behavior of p + ‐type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces
Author(s) -
Larionova Yevgeniya,
Turcu Mircea,
Reiter Sina,
Brendel Rolf,
Tetzlaff Dominic,
Krügener Jan,
Wietler Tobias,
Höhne Uwe,
Kähler JanDirk,
Peibst Robby
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700058
Subject(s) - passivation , materials science , chemical vapor deposition , polycrystalline silicon , crystallite , plasma enhanced chemical vapor deposition , amorphous solid , boron , silicon , oxide , amorphous silicon , layer (electronics) , substrate (aquarium) , analytical chemistry (journal) , chemical engineering , nanotechnology , optoelectronics , crystalline silicon , chemistry , crystallography , metallurgy , oceanography , organic chemistry , chromatography , geology , engineering , thin film transistor
We investigate the passivation quality of hole‐collecting junctions consisting of thermally or wet‐chemically grown interfacial oxides, sandwiched between a monocrystalline‐Si substrate and a p‐type polycrystalline‐silicon (Si) layer. The three different approaches for polycrystalline‐Si preparation are compared: the plasma‐enhanced chemical vapor deposition (PECVD) of in situ p + ‐type boron‐doped amorphous Si layers, the low pressure chemical vapor deposition (LPCVD) of in situ p + ‐type B‐doped polycrystalline Si layers, and the LPCVD of intrinsic amorphous Si, subsequently ion‐implanted with boron. We observe the lowest J 0e values of 3.8 fA cm −2 on thermally grown interfacial oxide on planar surfaces for the case of intrinsic amorphous Si deposited by LPCVD and subsequently implanted with boron. Also, we obtain a similar high passivation of p + ‐type poly‐Si junctions on wet‐chemically grown oxides as well as for all the investigated polycrystalline‐Si deposition approaches. Conversely, on alkaline‐textured surfaces, J 0e is at least 4 times higher compared to planar surfaces. This finding holds for all the junction preparation methods investigated. We show that the higher J 0e on textured surfaces can be attributed to a poorer passivation of the p + poly/c‐Si stacks on (111) when compared to (100) surfaces.