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Low temperature plasma‐enhanced ALD TiN ultrathin films for Hf 0.5 Zr 0.5 O 2 ‐based ferroelectric MIM structures
Author(s) -
Kozodaev M. G.,
Lebedinskii Y. Y.,
Chernikova A. G.,
Polyakov S. N.,
Markeev A. M.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700056
Subject(s) - tin , x ray photoelectron spectroscopy , materials science , atomic layer deposition , ferroelectricity , analytical chemistry (journal) , electrical resistivity and conductivity , electrode , impurity , capacitor , plasma , thin film , dielectric , optoelectronics , nanotechnology , chemical engineering , metallurgy , chemistry , electrical engineering , voltage , physics , organic chemistry , chromatography , quantum mechanics , engineering
In this work chemical and electrical properties of TiN films, grown by low temperature plasma‐enhanced atomic layer deposition (PE‐ALD) process from TiCl 4 and NH 3 , were investigated. Electrical resistivity as low as 250 μOhm × cm, as well as the lowest Cl impurity content, was achieved at 320 °C. Full‐ALD Hf 0.5 Zr 0.5 O 2 ‐based metal‐ferroelectric‐metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE‐ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf 0.5 Zr 0.5 O 2 ‐based ferroelectric capacitor. Angle‐resolved X‐ray photoelectron spectroscopy (AR‐XPS) was used for its thickness determination and a visible wake‐up effect in underlying Hf 0.5 Zr 0.5 O 2 layer was clearly observed.