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Effect of O 2 plasma on properties of electrolyte‐insulator‐semiconductor structures
Author(s) -
Arreola Julio,
Keusgen Michael,
Schöning Michael J.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700025
Subject(s) - surface modification , biosensor , capacitance , materials science , electrolyte , plasma , annealing (glass) , electrochemistry , isfet , nanotechnology , analytical chemistry (journal) , transistor , chemical engineering , chemistry , electrode , voltage , chromatography , field effect transistor , electrical engineering , composite material , physics , engineering , quantum mechanics
Prior to immobilization of biomolecules or cells onto biosensor surfaces, the surface must be physically or chemically activated for further functionalization. Organosilanes are a versatile option as they facilitate the immobilization through their terminal groups and also display self‐assembly. Incorporating hydroxyl groups is one of the important methods for primary immobilization. This can be done, for example, with oxygen plasma treatment. However, this treatment can affect the performance of the biosensors and this effect is not quite well understood for surface functionalization. In this work, the effect of O 2 plasma treatment on EIS sensors was investigated by means of electrochemical characterizations: capacitance–voltage ( C – V ) and constant capacitance (ConCap) measurements. After O 2 plasma treatment, the potential of the EIS sensor dramatically shifts to a more negative value. This was successfully reset by using an annealing process. ConCap measurement of an EIS sensor. a) Reference measurement, b) after O 2 plasma treatment, c) after annealing process.