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On the internal quantum efficiency for InGaN/GaN light‐emitting diodes grown on insulating substrates (Phys. Status Solidi A 12∕2016)
Author(s) -
Zhang ZiHui,
Zhang Yonghui,
Bi Wengang,
Demir Hilmi Volkan,
Sun Xiao Wei
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201670679
Subject(s) - light emitting diode , optoelectronics , nitride , quantum confined stark effect , materials science , quantum efficiency , diode , quantum well , polarization (electrochemistry) , electric field , stark effect , physics , optics , nanotechnology , chemistry , layer (electronics) , quantum mechanics , laser
The internal quantum efficiency (IQE) is one of the key figures of merit for III‐nitride based light‐emitting diodes (LEDs). The Feature Article by Zi‐Hui Zhang et al. (pp. 3078–3102 ) presents a comprehensive study revealing key factors influencing the IQE for III‐nitride based LEDs. Design strategies were discussed to reduce the electron escape, improve the hole injection, suppress the carrier loss caused by the nonradiative recombination, enhance the current spreading, screen the polarization‐induced electric field in the multiple quantum well (MQW) region, etc. New concepts were introduced and novel device designs were demonstrated to improve the IQE for III‐nitride based LEDs, such as the polarization self‐screening effect, the polarization cooling effect, the hole accelerator, the hole modulator, the PNP‐GaN current spreading layer, etc., enriching device physics for III‐nitride LEDs. These designs also provide general guidelines that might be effective to increase the IQE for III‐nitride deep ultraviolet LEDs, which currently are substantially impacted by the poor carrier injection efficiency, the current crowding effect, the strong quantum confined Stark effect (QCSE) in the MQW region, and so on