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Production of bulk NV centre arrays by shallow implantation and diamond CVD overgrowth (Phys. Status Solidi A 10∕2016)
Author(s) -
Lesik Margarita,
Raatz Nicole,
Tallaire Alexandre,
Spinicelli Piernicola,
John Roger,
Achard Jocelyn,
Gicquel Alix,
Jacques Vincent,
Roch JeanFrançois,
Meijer Jan,
Pezzagna Sébastien
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201670666
Subject(s) - diamond , materials science , ion implantation , chemical vapor deposition , optoelectronics , passivation , nanometre , etching (microfabrication) , nitrogen , fabrication , nanotechnology , layer (electronics) , ion , chemistry , composite material , medicine , alternative medicine , organic chemistry , pathology
The nanometre‐scale engineering of single nitrogen‐vacancy (NV) centres in diamond can be obtained by nitrogen implantation only at low‐energy (keV) with limited straggling. However, shallow NV centres (a few nm deep) generally have inferior overall properties than deeply implanted or deep native NV centres, due to the surface proximity. The study by M. Lesik et al. (pp. 2594–2600 ) shows the successful overgrowth of a pattern of very shallow implanted (2 nm) NV centres using an optimised overgrowth process, resulting in a bulk‐like array of NV centres 4 ìm below the surface. A pierced AFM tip has been used to collimate the ion beam during the nitrogen implantation. The growth conditions have been tuned to reduce at most surface etching and passivation of the implanted NV centres at the overgrowth start. Furthermore, the charge state of ensembles and single NV centres is stabilised in the wished negative charge state NV − after overgrowth. The combination of low‐energy high‐resolution ion implantation and high‐purity chemical vapour deposition (CVD) overgrowth procedures opens the way towards the fabrication of scalable and efficient quantum devices based on single defects in diamond.