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Optoelectronic devices on AlGaN/GaN HEMT platform (Phys. Status Solidi A 5∕2016)
Author(s) -
Li Baikui,
Tang Xi,
Wang Jiang,
Chen Kevin J.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201670629
Subject(s) - optoelectronics , high electron mobility transistor , materials science , heterojunction , light emitting diode , electroluminescence , doping , gallium nitride , diode , transistor , nitride , nanotechnology , electrical engineering , layer (electronics) , voltage , engineering
III‐nitride optoelectronic and electronic devices have been essentially developed using different epi‐structures, i.e., ‘vertical’ pn junction and ‘lateral’ p ‐doping‐free heterojunction, respectively. Integration of the photonic and electronic functionalities of III‐nitride semiconductors is of technological interest but has been challenged by the incompatibility of optimized epi‐growth conditions and by the complexity of integrated devices with different active layers. Baikui Li et al. (pp. 1213–1221 ) have achieved electroluminescence (EL) including the GaN band‐edge emission at 3.4 eV from Ni/Au‐ AlGaN/GaN p ‐doping‐free Schottky‐on‐heterojunction diodes with forward biases higher than 2 V. Based on the surface states distribution of AlGaN, a hot‐electron‐induced surface states impact ionization model was proposed to explain the hole generation and EL process in the p ‐doping‐free Schottkyon‐ heterojunction light‐emitting diodes (SoH‐LEDs). This SoH‐LED can be seamlessly integrated into the AlGaN/GaN power high electron mobility transistors (HEMTs) platform as a unique on‐chip photon source. By integrating the SoH‐LED structure into the drain terminal of a HEMT, a transistor with photonicohmic drain (PODFET) is implemented. In PODFET, photon generation is inherently switched ON/OFF in synchronization with the channel current. The dynamic performances of the PODFET are significantly enhanced owing to photon pumpingof deep electron traps.