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The same batch enabled threshold voltage tuning for vertically‐ or laterally‐gated transparent InZnO thin‐film transistors
Author(s) -
Zhang Lili,
Li Long,
Zhang Hongliang,
Cao Hongtao,
Liang Lingyan,
Gao Junhua,
Zhuge Fei,
Zhou Jumei
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600918
Subject(s) - optoelectronics , thin film transistor , materials science , threshold voltage , transistor , shadow mask , voltage , layer (electronics) , optics , electrical engineering , nanotechnology , physics , engineering
Fully transparent InZnO thin‐film transistors (TFTs), with either a bottom gate or an in‐plane gate device structure, were fabricated using the solution‐processed SA proton conducting films as gate dielectrics. The self‐assembled InZnO channel with different thickness by the gradient shadow mask was fabricated during the same batch radio‐frequency magnetron sputtering. The threshold voltage can be modulated from −0.25 to +0.12 V and from −0.07 to +0.25 V by the channel layer thickness variations for the vertically‐coupled and laterally‐coupled InZnO TFTs, respectively. Accordingly, these InZnO TFTs can operate in either depletion or enhancement mode on the same chip. A general expression of the turn‐on voltage in relation to the channel thickness is derived. The device performance with an on/off current ratio of ≥1.5 × 10 6 , a subthreshold swing of down to 70 mV/decade, and a field‐effect mobility of up to 34.3 cm 2 /V · s is exhibited. Our results demonstrate that the same batch channel processing is potentially applied in logic circuits or functional electronics.