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Applicability of an economic diode laser emitting at 980 nm for preparation of polycrystalline silicon thin film solar cells on glass
Author(s) -
Plentz Jonathan,
Schmidt Thomas,
Gawlik Annett,
Bergmann Joachim,
Andrä Gudrun,
Hauschild Dirk,
Lissotschenko Vitalij
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600882
Subject(s) - materials science , polycrystalline silicon , optoelectronics , laser , amorphous silicon , silicon , nanocrystalline silicon , diode , crystallization , laser diode , solar cell , absorption (acoustics) , monocrystalline silicon , amorphous solid , thin film , optics , crystalline silicon , nanotechnology , composite material , crystallography , chemistry , physics , organic chemistry , layer (electronics) , thin film transistor
Recently, polycrystalline silicon thin film solar cells on glass are fabricated by a laser induced liquid phase crystallization (LPC) process. This study compares a new economic diode laser, emitting a line focus at 980 nm, with the 808 nm laser normally used concerning its absorption during LPC. We measured the optical constants of amorphous silicon by spectral ellipsometry and UV/VIS spectroscopy. Together with the literature data for crystalline and liquid silicon combined with numerical temperature simulations, we calculated the absorption during LPC and the overall power needed for successful crystallization. Solar cells prepared with both laser types show comparable crystallographic and optoelectronic characteristics. Concerning the economic advantages, the use of such a 980 nm diode laser system would be the choice for the potential industrial production. Polycrystalline silicon thin film solar cells on glass are fabricated by laser‐induced liquid phase crystallization. A new economic diode laser emitting a line focus at 980 nm is compared to the 808 nm laser normally used. Solar cells show comparable crystallographic and optoelectronic characteristics.