Premium
Resistive switching properties and physical mechanism of europium oxide thin films
Author(s) -
Xie Wei,
Zou Changwei,
Bao Dinghua
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600874
Subject(s) - materials science , ohmic contact , thin film , optoelectronics , resistive random access memory , schottky diode , deposition (geology) , schottky barrier , thermal conduction , high resistance , resistive touchscreen , voltage , layer (electronics) , nanotechnology , composite material , electrical engineering , diode , paleontology , agronomy , engineering , sediment , biology
A forming‐free resistive switching effect was obtained in Pt/Eu 2 O 3 /Pt devices in which the Eu 2 O 3 thin films were fabricated by a chemical solution deposition method. The devices show unipolar resistive switching with excellent switching parameters, such as high resistance ratio (10 7 ), stable resistance values (read at 0.2 V), low reset voltage, good endurance, and long retention time (up to 10 4 s). On the basis of the analysis of the current–voltage ( I – V ) curves and the resistance‐temperature dependence, it can be concluded that the dominant conducting mechanisms were ohmic behavior and Schottky emission at low resistance state and high resistance state, respectively. The resistive switching behavior could be explained by the formation and rupture of conductive filament, which is related to the abundant oxygen vacancies generated in the deposition process. This work demonstrates the great potential opportunities of Eu 2 O 3 thin film in resistive switching memory applications, which might possess distinguished properties.