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Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate‐transfer technique
Author(s) -
Hiroki Masanobu,
Kumakura Kazuhide,
Yamamoto Hideki
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600845
Subject(s) - materials science , optoelectronics , high electron mobility transistor , transistor , substrate (aquarium) , sapphire , epitaxy , gallium nitride , layer (electronics) , composite material , electrical engineering , optics , laser , oceanography , physics , voltage , geology , engineering
We transferred AlGaN/GaN high‐electron‐mobility transistors (HEMTs) from a sapphire substrate to a copper plate using a hexagonal boron nitride (h‐BN) epitaxial lift‐off technique. The bonding adhesion between the HEMTs and the copper plate is improved by optimizing Au–Au thermocompression processes and removing the h‐BN residual layer after the lift‐off. Thermal resistance estimated by Raman thermography is as low as 6 mm∘C/W, which is comparable to that of a HEMT grown on SiC substrate.As a result, the reduction in I d versus V ds due to self‐heating effect is suppressed to a negligible level. These results indicate that the substrate transfer technique is effective for achieving high‐power performance of GaN‐based electron devices.