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Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias‐controllable field plate
Author(s) -
Mase Suguru,
Wakejima Akio,
Egawa Takashi
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600840
Subject(s) - high electron mobility transistor , passivation , trapping , materials science , optoelectronics , activation energy , gallium nitride , transistor , chemistry , electrical engineering , nanotechnology , layer (electronics) , voltage , ecology , organic chemistry , biology , engineering
We analyzed carrier trapping in AlGaN/GaN HEMT occurring between gate and drain with a bias‐controllable Field Plate (CFP) on a Si 3 N 4 passivation, which is structurally and electrically independent from other electrodes. We observed the recovery of a transient drain current which was associated with carrier emission after the momentary pulse bias of CFP. From the temperature dependence of pulsed I–V measurements, an activation energy of the trap state was 0.083 eV and capture cross section was 2.0 × 10 −24 cm −2 . This value is the same to the activation energy of the surface leakage current in AlGaN/GaN HEMT with Si 3 N 4 passivation. The trap state with the activation energy of 0.083 eV has important role in pulse operation of AlGaN/GaN FP‐HEMT with Si 3 N 4 passivation.