An AlGaN/GaN field effect diode with a high turn‐on voltage controllability | Zendy

Kato Naoki | Zendy; Wakejima Akio | Zendy; Osada Yamato | Zendy; Kamimura Ryuichiro | Zendy; Itoh Kenji | Zendy; Egawa Takashi | Zendy

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An AlGaN/GaN field effect diode with a high turn‐on voltage controllability

Author(s) -

Kato Naoki,

Wakejima Akio,

Osada Yamato,

Kamimura Ryuichiro,

Itoh Kenji,

Egawa Takashi

Publication year - 2017

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201600830

Subject(s) - controllability , materials science , optoelectronics , diode , barrier layer , wide bandgap semiconductor , etching (microfabrication) , layer (electronics) , gallium nitride , voltage , electrical engineering , nanotechnology , mathematics , engineering

In this paper, an AlGaN/GaN Field Effect Diode (FED) with high turn‐on voltage ( V ON ) controllability is proposed. The structural feature of a δ‐doped GaN cap, an AlGaN barrier, and a GaN channel (GaN/AlGaN/GaN), and selective dry‐etching of the GaN cap, ensure the precise control of V ON which can be modulated by AlGaN barrier layer thickness. The V ON as low as 0.3 V is obtained at the remained AlGaN thickness of 4‐nm with an extremely low estimated V ON deviation.

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