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An AlGaN/GaN field effect diode with a high turn‐on voltage controllability
Author(s) -
Kato Naoki,
Wakejima Akio,
Osada Yamato,
Kamimura Ryuichiro,
Itoh Kenji,
Egawa Takashi
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600830
Subject(s) - controllability , materials science , optoelectronics , diode , barrier layer , wide bandgap semiconductor , etching (microfabrication) , layer (electronics) , gallium nitride , voltage , electrical engineering , nanotechnology , mathematics , engineering
In this paper, an AlGaN/GaN Field Effect Diode (FED) with high turn‐on voltage ( V ON ) controllability is proposed. The structural feature of a δ‐doped GaN cap, an AlGaN barrier, and a GaN channel (GaN/AlGaN/GaN), and selective dry‐etching of the GaN cap, ensure the precise control of V ON which can be modulated by AlGaN barrier layer thickness. The V ON as low as 0.3 V is obtained at the remained AlGaN thickness of 4‐nm with an extremely low estimated V ON deviation.