Premium
GaN/Al 0.1 Ga 0.9 N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
Author(s) -
Zhang Lingxia,
Tang Shaoji,
Wu Hualong,
Wang Hailong,
Wu Zhisheng,
Jiang Hao
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600821
Subject(s) - ultraviolet , heterojunction , sapphire , chemical vapor deposition , materials science , optoelectronics , photodiode , fabrication , biasing , visible spectrum , metalorganic vapour phase epitaxy , dark current , voltage , optics , photodetector , epitaxy , laser , nanotechnology , physics , medicine , alternative medicine , pathology , quantum mechanics , layer (electronics)
The fabrication and characterization of GaN/Al 0.1 Ga 0.9 N visible‐blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low‐pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150‐μm‐diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3 V. High ultraviolet‐to‐visible rejection ratios of 1.9 × 10 4 and 1.2 × 10 2 were obtained at the bias voltages of 2 and 4 V, respectively. Optical gain as high as 1.6 × 10 3 was achieved.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom