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Monolithic cyan − violet InGaN/GaN LED array
Author(s) -
Dróżdż Piotr A.,
Sarzyński Marcin,
Domagała Jarosław Z.,
Grzanka Ewa,
Grzanka Szymon,
Czernecki Robert,
Marona Łucja,
Korona Krzysztof P.,
Suski Tadeusz
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600815
Subject(s) - light emitting diode , optoelectronics , materials science , diode , sapphire , cyan , substrate (aquarium) , indium gallium nitride , indium , epitaxy , gallium nitride , wavelength , laser , optics , nanotechnology , layer (electronics) , physics , oceanography , geology
In the case of InGaN alloys grown by metalorganic vapour phase epitaxy on a c ‐plane GaN, indium content decreases as the substrate miscut is increased. This phenomenon has been previously used to fabricate laser diodes with variable wavelength on one chip [Appl. Phys. Express 5, 021001 (2012)]. In that work, however, wavelength variation was only 5 nm. In the present work we show independent, electrically driven array of light emitting diodes (LED), covering 40 nm emission wavelength range on one chip. This is achieved by a particular patterning technique, which enables the change in the local miscut of the substrate by introducing large enough slopes for practical devices. This technological approach offers a new degree of freedom for InGaN/GaN bandgap modification and device engineering. It can be applied to freestanding GaN as well as to GaN/sapphire templates used for mass production of LEDs. Once optimized, this approach could eventually lead to truly monolithic RGB LEDs.