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V‐shaped semipolar InGaN/GaN multi‐quantum‐well light‐emitting diodes directly grown on c‐plane patterned sapphire substrates
Author(s) -
Wang Lai,
Jin Jie,
Hao Zhibiao,
Luo Yi,
Sun Changzheng,
Han Yanjun,
Xiong Bing,
Wang Jian,
Li Hongtao
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600810
Subject(s) - cathodoluminescence , materials science , sapphire , electroluminescence , optoelectronics , quantum well , light emitting diode , scanning electron microscope , photoluminescence , diode , blueshift , optics , luminescence , laser , nanotechnology , physics , composite material , layer (electronics)
In this paper, we report growth of V‐shaped GaN on c‐plane patterned sapphire substrates (PSS) directly without any masks through a 3‐dimensional (3D) growth. Furthermore, semipolar InGaN/GaN multi‐quantum‐well (MQW) LED is grown on the sidewalls of V‐shaped GaN, with doubled the normal growth time of active region and p‐type region. Through scanning electron microscopy (SEM) and cathodoluminescence (CL) test, two types of semipolar facets are found in V‐pits, { 10 1 ¯ 1 } and { 11 2 ¯ 2 } , emitting at 446 and 393 nm, respectively. In photoluminescence (PL), only one strong peak is observed at 441 nm, which corresponds to { 101 ¯1 } facets. In addition, two peaks at 448 and 500 nm are observed in electroluminescence (EL) when injection current is low, which are attributed to { 101 ¯1 } facets and c‐plane, respectively. However, the peak from { 10 1 ¯ 1 } facets becomes dominant with the increasing injection current from 3 to 100 mA, whose wavelength has a blue‐shift of only 2 nm.