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High power, high PAE Q‐band sub‐10 nm barrier thickness AlN/GaN HEMTs
Author(s) -
Dogmus Ezgi,
Kabouche Riad,
Linge Astrid,
Okada Etienne,
Zegaoui Malek,
Medjdoub Farid
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600797
Subject(s) - materials science , optoelectronics , transistor , layer (electronics) , power density , barrier layer , wide bandgap semiconductor , power (physics) , voltage , electrical engineering , nanotechnology , physics , engineering , quantum mechanics
We report a state‐of‐the‐art performance of deep sub‐micrometer gate length AlN/GaN High Electron Mobility Transistors using a thick in situ SiN cap layer. With 120 nm gate length large‐signal load‐pull measurements showed a peak power‐added‐efficiency (PAE) above 45%. To the best of our knowledge, this represents the highest PAE for GaN HEMTs at 40 GHz, especially when using a sub‐10 nm barrier thickness. Furthermore, state‐of‐the‐art peak output power density above 6 W mm −1 at 40 GHz has been achieved in pulsed mode. This is the highest output power ever reported for sub‐10 nm barrier thickness Q‐Band GaN devices. The performance improvement is attributed to the thick in situ SiN cap layer and optimized electron confinement allowing higher voltage operation and lower dispersion under high electric field.