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Development of AlInN photoconductors deposited by sputtering
Author(s) -
NúñezCascajero Arántzazu,
JiménezRodríguez Marco,
Monroy Eva,
GonzálezHerráez Miguel,
Naranjo Fernando B.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600780
Subject(s) - responsivity , materials science , optoelectronics , photoconductivity , photocurrent , sapphire , sputtering , band gap , wavelength , photodetector , optics , thin film , laser , physics , nanotechnology
In this work, we have developed photoconductor devices based on Al 0.39 In 0.61 N layers grown on sapphire by reactive radio‐frequency magnetron sputtering. The fabricated devices show a sublinear dependence of the photocurrent as a function of the incident optical power. The above‐the‐band‐gap responsivity reaches 7 W/A for an irradiance of 10 W/m 2 (405 nm wavelength). The response decreases smoothly for below‐the‐bandgap excitation, dropping by more than an order of magnitude at 633 nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries.