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Effects of working pressure on the structure and properties of ZnO film
Author(s) -
Fan Xiaoling,
Liu Juncheng,
Zhai Shenqiu
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600740
Subject(s) - wurtzite crystal structure , materials science , crystallite , thin film , band gap , ceramic , sputter deposition , composite material , crystal structure , electrical resistivity and conductivity , hexagonal crystal system , optoelectronics , sputtering , zinc , nanotechnology , crystallography , metallurgy , chemistry , engineering , electrical engineering
ZnO thin films were prepared via RF magnetron sputtering from a ZnO ceramic target. The effects of the working pressure on the ZnO film structure, surface morphology, and photoelectrical properties were investigated. The films were all compact, and composed of polycrystalline grains with hexagonal wurtzite structures and a c‐axis preference. The film crystal size first increased and then decreased with increasing pressure, so did the Hall mobility. In contrast, the carrier concentration and body resistivity initially decreased before increasing. Moreover, the film's inner compressive stress first decreased before increasing with increasing working pressure. All of the thin films exhibited high transmittances averaging 85% in the visible region. The band gap for the films ranged from 3.26 to 3.28 eV.