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Nitrogen enhanced thermal stability of nickel monosilicide
Author(s) -
Zuruzi A. S.,
Chi D. Z.,
Mangelinck D.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600710
Subject(s) - annealing (glass) , materials science , thermal stability , nucleation , nickel , nitrogen , torr , impurity , analytical chemistry (journal) , surface roughness , sheet resistance , metallurgy , chemical engineering , composite material , thermodynamics , chemistry , chromatography , physics , organic chemistry , layer (electronics) , engineering
The effect of annealing ambient during rapid thermal processing on thermal stability of NiSi has been investigated. Nickel films deposited onto Si(100) were annealed in vacuum, Ar and N 2 at pressures up to 40 Torr. Rapid thermal annealing in vacuum or in Ar at 750 °C resulted in the formation of NiSi 2 with concomitant increase in sheet resistance and surface roughness. However, annealing in N 2 increases the NiSi 2 nucleation temperature and thus the thermal stability of NiSi. Higher the N 2 pressure, higher was the annealing temperature required to initiate NiSi 2 nucleation. Experimental results were analyzed using a simple thermodynamic model. It suggests dissolved nitrogen impurities lower the chemical potential and increase thermal stability of NiSi phase. Phase stability observed experimentally was in agreement with that predicted by the model. Threshold nitrogen pressure exists for stabilization of nickel monosilicide during rapid thermal annealing.