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Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors
Author(s) -
Takahashi Takuto,
Hatsushiba Shota,
Fujikawa Sachie,
Fujishiro Hiroki I.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600599
Subject(s) - high electron mobility transistor , cutoff frequency , transistor , noise (video) , electron , optoelectronics , infrasound , materials science , physics , noise figure , cutoff , amplifier , voltage , computer science , cmos , quantum mechanics , artificial intelligence , acoustics , image (mathematics)
We study comparatively the RF and the noise characteristics for the In 0.7 Ga 0.3 As, InAs/AlSb and InSb high electron mobility transistors (HEMTs) by using the quantum corrected Monte Carlo (QC‐MC) simulation. The increase in the current fluctuation <Δ I d s 2> with V ds is caused by the increase in the electron velocity varianceσ v 2(i.e., the electron heating); this indicates clearly that the low V ds operation is essential to lowering <Δ I d s 2>. The smaller electron effective m * results in the largerσ v 2and thus the larger <Δ I d s 2>, yet it allows the low V ds operation through the higher μ . The InSb HEMT with the channel of the smallest m * overcomes the inherent nature of the larger <Δ I d s 2> through the ability of the lower V ds operation along with the larger g m . Eventually, the InSb HEMT shows the smallest minimum noise figure NF min of 0.31 dB with the associated gain G ass of 12.4 dB at 100 GHz and the highest cutoff frequency f T of 1.8 THz at V ds of 0.2 V. These results indicate the potential of the InSb HEMT for the ultra‐low power, ultra‐high frequency, and the ultra‐low noise transistor.