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A novel nanoscale‐crossbar resistive switching memory using a copper chemical displacement technique
Author(s) -
Lin LiMin,
Yang WenLuh,
Lin YuHsien,
Hsiao YuPing,
Chin FunTat,
Kao MingFang
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600595
Subject(s) - resistive random access memory , crossbar switch , materials science , nanoscopic scale , fabrication , nanotechnology , optoelectronics , etching (microfabrication) , lithography , layer (electronics) , rectification , electronic engineering , voltage , electrical engineering , medicine , alternative medicine , engineering , pathology
Nanoscale‐crossbar electrochemical‐metallization (ECM) type resistive‐switching random access memory (ReRAM) is considered promising candidates for next‐generation non‐volatile memory. However, performing nanoscale patterning with traditional Cu‐based ECM ReRAM is quite challenging, because Cu is difficult to control and pattern using lithography and etching. In this study, a nanoscale Cu‐based ReRAM with a Si 3 N 4 –SiO 2 bi‐layer was fabricated successfully through a novel Cu chemical displacement technique (Cu‐CDT). Compared with other conventional Cu deposition techniques, the Cu‐CDT exhibits numerous advantages including simplicity, low‐temperature fabrication, low cost, and high displacement selectivity between poly‐Si and the Si 3 N 4 –SiO 2 bi‐layer. Moreover, the developed nanoscale‐crossbar Cu‐CDT ReRAM device demonstrated stable switching and remarkable high‐temperature data retention. Therefore, the Cu‐CDT is an effective approach for overcoming Cu etching and patterning limitations.