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The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs
Author(s) -
Pavan Paolo,
Zagni Nicolò,
Puglisi Francesco Maria,
Alian Alireza,
Thean Aaron VoonYew,
Collaert Nadine,
Verzellesi Giovanni
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600592
Subject(s) - capacitance , materials science , hysteresis , optoelectronics , voltage , electron mobility , channel (broadcasting) , sensitivity (control systems) , analytical chemistry (journal) , spurious relationship , gate voltage , trap (plumbing) , electrical engineering , chemistry , condensed matter physics , electronic engineering , environmental science , physics , transistor , computer science , electrode , engineering , chromatography , machine learning , environmental engineering
In this article, we present coupled experimental/simulated results about the influence of interface and border traps on the electrical characteristics and split‐CV mobility extraction in InGaAs MOSFETs. These results show that border traps limit the maximum drain current under on‐state conditions, induce a hysteresis in the quasi‐static transfer characteristics, as well as affect CV measurements, inducing an increase in the accumulation capacitance even at high frequencies where trap effects are commonly assumed to be negligible. Hysteresis in the transfer characteristics can be used as a sensitive monitor of border traps, as suggested by a sensitivity analysis where either the energetic or the spatial distribution of border traps are varied. Finally, we show that mobility extraction by means of the split‐CV method is affected by appreciable errors related to the spurious contributions of interface and border traps to the total gate charge, ultimately resulting in significant channel mobility underestimation. In very narrow channel devices, channel electron spilling over the InP buffer layer can also contribute to mobility measurement inaccuracy.