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Investigating subsurface damages in semiconductor–insulator–semiconductor solar cells with THz spectroscopy
Author(s) -
Blumröder Ulrike,
Hempel Hannes,
Füchsel Kevin,
Hoyer Patrick,
Bingel Astrid,
Eichberger Rainer,
Unold Thomas,
Nolte Stefan
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600590
Subject(s) - semiconductor , materials science , optoelectronics , terahertz radiation , insulator (electricity) , spectroscopy , plasma , heterojunction , silicon , silicon on insulator , physics , quantum mechanics
The influence of near‐surface crystal damage on carrier dynamics in silicon has been investigated with optical‐pump THz‐probe and THz emission studies. The surface damage is caused by a plasma process used for the fabrication of the ultrathin insulator within semiconductor–insulator–semiconductor (SIS) solar cells. The ion bombardment during the plasma process introduces a highly damaged subsurface region. Furthermore, the integration of positive interface charges leads to the formation of a depletion region that can be detected via the emitted THz radiation. The results are compared with classic I – U ‐characterization demonstrating that THz spectroscopy can be used as a supplementary tool for the investigation of process‐induced surface damages.