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Improvement of kesterite solar cell performance by solution synthesized MoO 3 interfacial layer
Author(s) -
Ranjbar Samaneh,
Brammertz Guy,
Vermang Bart,
Hadipour Afshin,
Cong Shuren,
Suganuma Katsuaki,
Schnabel Thomas,
Meuris Marc,
da Cunha A. F.,
Poortmans Jef
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600534
Subject(s) - kesterite , solar cell , materials science , czts , optoelectronics , layer (electronics) , open circuit voltage , carrier lifetime , solar cell efficiency , voltage , nanotechnology , silicon , electrical engineering , engineering
In this study, an ultra‐thin MoO 3 layer synthesized by a solution‐based technique is introduced as a promising interfacial layer to improve the performance of kesterite Cu 2 ZnSnSe 4 (CZTSe) solar cell. Solar cells with 10 nm of MoO 3 between Mo rear contact and CZTSe had larger minority carrier life time and open‐circuit voltage compared to the reference solar cells. Temperature dependent current density–voltage measurement indicated that the activation energy ( E A ) of the main recombination is higher (∼ 837 meV) in solar cells with MoO 3 layer, as compared to conventional solar cells where E A ∼ 770 meV, indicating reduced interface recombination. A best efficiency of 7.1% was achieved for a SLG/Mo/MoO 3 /CZTSe/CdS/TCO solar cell compared to the reference solar cell SLG/Mo/CZTSe/CdS/TCO for which 5.9% efficiency was achieved.