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A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor
Author(s) -
He Yunlong,
Zhai Shaopeng,
Mi Minhan,
Zhou Xiaowei,
Zheng Xuefeng,
Zhang Meng,
Zhang Peng,
Yang Ling,
Wang Chong,
Ma Xiaohua,
Hao Yue
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600504
Subject(s) - high electron mobility transistor , nanowire , threshold voltage , materials science , transistor , optoelectronics , channel (broadcasting) , electron , voltage , electron mobility , physics , electrical engineering , engineering , quantum mechanics
A new simple model of threshold voltage for AlGaN/GaN nanowire channel high electron mobility transistors (NC‐HEMTs) is built in this work. Firstly, four NC‐HEMTs with different nanowire channel width are fabricated, and the conventional HEMT is produced for comparison. With the nanowire channel width decreasing, the threshold voltage of NC‐HEMTs moves positively. Then, the dependence of electron concentration on the nanowire channel width is studied by Silvaco simulation software. With the nanowire channel width decreasing, the electron concentration reduces. Finally, we recognize the threshold voltage model of conventional HEMT for NC‐HEMT modeling, and the new model of threshold voltage of NC‐HEMT is obtained. This model can explain the dependence of electron concentration on nanowire channel width. The depletion region width formed by side gate is about 37 nm which is obtained by the equation of the new model.