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Effect of illumination on the hump phenomenon in I – V characteristics of amorphous InGaZnO TFTs under positive gate‐bias stress
Author(s) -
Cho YongJung,
Lee YeolHyeong,
Kim WooSic,
Kim ByeongKoo,
Park Kyung Tae,
Kim Ohyun
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600503
Subject(s) - thin film transistor , materials science , amorphous solid , threshold voltage , stress (linguistics) , subthreshold conduction , subthreshold slope , optoelectronics , voltage , condensed matter physics , transistor , composite material , electrical engineering , chemistry , crystallography , layer (electronics) , physics , linguistics , philosophy , engineering
We measured the current–voltage ( I – V ) characteristics of amorphous Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) thin film transistors (TFTs) to investigate the mechanism that causes the hump in their I – V characteristics under positive bias illumination temperature stress (PBITS) and under positive bias temperature stress (PBTS). Hump phenomenon in subthreshold region in I – V characteristics occurred under PBITS and PBTS. The hump threshold voltage ( V H ) shifted more negatively under PBITS than under PBTS; amount of shift of V H was 6.06 V under PBITS and 3.28 V under PBTS during same stress time, from 2000 to 10,000 s. It is because additional ionized oxygen vacancies ( V O +orV O + 2) provided by illumination contributed to induce hump phenomenon than in darkness.