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Room temperature ultraviolet light‐emitting ZnO vertical nanowires prepared by electrochemical growth
Author(s) -
Izaki Masanobu,
Komori Jun,
Shimizu Kairi,
Koyama Takayuki,
Shinagawa Tsutomu
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600473
Subject(s) - zinc nitrate , photoluminescence , materials science , ultraviolet , zinc , wafer , substrate (aquarium) , nanowire , ultraviolet light , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , oceanography , chromatography , geology
The <0001>‐oriented ZnO layer and vertical nanowires (vnws) were prepared on the <111>‐Au/Si wafer and <0001>‐Ga:ZnO(GZO) substrates by electrodeposition in zinc nitrate solutions, and the photoluminescence characteristics were estimated at room temperature. The lattice mismatch was estimated to be 12.9–14.8% and 0.4–1.1% for the <111>‐Au/Si wafer and <0001>‐GZO substrates by X‐ray diffraction techniques. The <0001>‐ZnO layer prepared in the 80 mmol L −1 zinc nitrate solution emitted strong visible light originating from native defects, and the <0001>‐ZnO‐vnws prepared in the 8 and 0.8 mmol L −1 zinc nitrate solutions showed a strong ultraviolet light emission due to the recombination of bound excitons, irrespective of the substrate. Excellent ultraviolet light emission has been realized for the <0001>‐ZnO‐vnws prepared on the <0001>‐GZO substrate in the 0.8 mmol L −1 zinc nitrate solution.