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Amorphous and crystalline In 2 O 3 ‐based transparent conducting films for photovoltaics
Author(s) -
Koida Takashi
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600464
Subject(s) - materials science , amorphous solid , sheet resistance , crystallite , transparent conducting film , crystallization , optoelectronics , electron mobility , photovoltaics , doping , solar cell , sputter deposition , electrical resistivity and conductivity , thin film , sputtering , chemical engineering , photovoltaic system , nanotechnology , crystallography , layer (electronics) , chemistry , metallurgy , electrical engineering , engineering
We reported solar cells with reduced electrical and optical losses using hydrogen‐doped In 2 O 3 (In 2 O 3 :H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid‐phase crystallization of amorphous (a‐) In 2 O 3 :H films grown by magnetron sputtering. The polycrystalline (poly‐) In 2 O 3 :H films exhibited electron mobilities (over 100 cm 2 V −1 s −1 ) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In 2 O 3 ‐based TCO; (ii) the structural and optoelectrical properties of the a‐In 2 O 3 :H and poly‐In 2 O 3 :H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described.