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Interface dislocations in In x Ga 1– x N/GaN heterostructures
Author(s) -
Li Q. T.,
Minj A.,
Chauvat M. P.,
Chen J.,
Ruterana P.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600442
Subject(s) - burgers vector , materials science , heterojunction , transmission electron microscopy , condensed matter physics , crystallography , partial dislocations , epitaxy , relaxation (psychology) , dislocation , optoelectronics , nanotechnology , layer (electronics) , chemistry , physics , composite material , psychology , social psychology
Interface dislocations have been investigated by transmission electron microscopy for In x Ga 1 –x N (50 nm)/GaN heterostructures grown by metal‐organic vapor phase epitaxy for 0.13 < x < 0.20. Structural properties of the dislocations were analysed by conventional transmission electron microscopy by diffraction contrast. We observed two kinds of dislocations lying in the interface: screw type dislocations with Burgers vector b = a = 1/3 <11−20> and pure edge misfit dislocations. The screw type dislocations were observed for x ≤ 0.17 and misfit dislocations for x ≥ 0.18. While the formation of MDs may be explained in the framework of conventional interface strain relaxation, the presence of screw‐type dislocations may bring new insight on processes in hexagonal materials heteroepitaxy.