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All‐solution‐printed oxide thin‐film transistors by direct thermal nanoimprinting for use in active‐matrix arrays
Author(s) -
Hirose Daisuke,
Koyama Hiroaki,
Fukada Kazuhiro,
Murakami Yoshitaka,
Satou Keisuke,
Inoue Satoshi,
Shimoda Tatsuya
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600397
Subject(s) - thin film transistor , materials science , active matrix , oxide , thermoplastic , transistor , optoelectronics , thermal , matrix (chemical analysis) , nanotechnology , composite material , layer (electronics) , electrical engineering , metallurgy , physics , engineering , voltage , meteorology
All‐solution‐printed oxide thin‐film transistors (TFTs) were fabricated using a direct thermal nanoimprinting technique termed nanorheology printing (n‐RP). n‐RP is a printing technology that utilizes the thermoplastic properties of oxide gels. We prepared such thermoplastic oxide gels and developed a suitable alignment system. Using this system, TFTs designed for use in active‐matrix arrays were fabricated with a high alignment accuracy of less than 5 µm. We succeeded in incorporating these TFTs into all‐solution‐printed oxide TFT arrays, and the operation of the transistors in the arrays was confirmed.