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Si and Ge nanocrystals in resonator multilayer structures
Author(s) -
Grachev D. A.,
Ershov A. V.,
Belolipetsky A. V.,
Krasilnikova L. V.,
Yablonskiy A. N.,
Andreev B. A.,
Gusev O. B.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600383
Subject(s) - photoluminescence , materials science , annealing (glass) , nanocrystal , nanosecond , optoelectronics , silicon , resonator , planar , oxide , silicon oxide , analytical chemistry (journal) , nanotechnology , optics , laser , chemistry , silicon nitride , physics , computer graphics (images) , chromatography , computer science , metallurgy , composite material
We have produced optical planar resonators with an oxide layer (SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 ) containing Ge or Si nanocrystals as an active medium, which was placed between two Bragg mirrors. Samples have been obtained by vacuum physical deposition on silicon substrates and subsequent annealing of the active medium. Stationary and nanosecond time‐resolved photoluminescence spectra have been measured in the range of 1.4–2.5 eV at room temperature. We have observed strong enhancement of the photoluminescence signal by 5 and 100 times for the Si and Ge nanocrystals placed in the microcavities at 1.7 and 1.8 eV, respectively. This was accompanied by a significant reduction of the photoluminescence decay time which is a proof of the Purcell effect. It has been found out that the oxide environment weakly affects the optical features of the resonators.