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Electroluminescence from NiSi 2 /Si/NiSi 2 nanowire heterostructures operated at high electric fields
Author(s) -
Glassner Sebastian,
Periwal Priyanka,
Baron Thierry,
Bertagnolli Emmerich,
Lugstein Alois
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600370
Subject(s) - electroluminescence , materials science , heterojunction , nanowire , optoelectronics , semiconductor , silicon , electric field , band gap , light emission , nanotechnology , physics , layer (electronics) , quantum mechanics
The realization of an efficient, silicon‐based light source with nanoscale dimensions may be the missing link to overcome the physical limitations of electrical signaling. Therefore, the generation of hot‐carriers to increase the transition possibilities within the band structure has shown promising results to cope with the inefficient light emission of indirect semiconductors. Here, we present the electroluminescent properties of NiSi 2 /silicon/NiSi 2 nanowire heterostructures, operated at high electric fields. These hot carrier electroluminescent devices show highly reproducible, super‐ and sub‐bandgap emission of light, covering the visible spectrum and extending toward the near infrared regime. A pronounced peak, centered in the blue visible region at 2.6 eV is assigned to phonon‐assisted interband recombination of hot carriers. Spectral components at energies lower than 2.3 eV are linearly polarized along the nanowire axis and mainly attributed to intraband transitions.