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Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy
Author(s) -
Demir İlkay,
Robin Yoann,
McClintock Ryan,
Elagoz Sezai,
Zekentes Konstantinos,
Razeghi Manijeh
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600363
Subject(s) - materials science , full width at half maximum , epitaxy , photoluminescence , optoelectronics , substrate (aquarium) , light emitting diode , cantilever , layer (electronics) , nanotechnology , composite material , oceanography , geology
AlN layers have been grown on 200 nm period of nanopatterned Si (111) substrates by cantilever epitaxy and compared with AlN layers grown by maskless lateral epitaxial overgrowth (LEO) on micropatterned Si (111) substrates. The material quality of 5–10 µm thick AlN grown by LEO is comparable to that of much thinner layers (2 µm) grown by cantilever epitaxy on the nanopatterned substrates. Indeed, the latter exhibited root mean square (RMS) roughness of 0.65 nm and X‐ray diffraction full width at half‐maximum (FWHM) of 710 arcsec along the (0002) reflection and 930 arcsec along the (10–15) reflection. The corresponding room temperature photoluminescence spectra was dominated by a sharp band edge peak. Back emission ultra violet light emitting diodes (UV LEDs) were fabricated by flip chip bonding to patterned AlN heat sinks followed by complete Si (111) substrate removal demonstrating a peak pulsed power of ∼0.7 mW at 344 nm peak emission wavelength. The demonstrated UV LEDs were fabricated on a cost effective epitaxial structure grown on the nanopatterned Si substrate with a total thickness of 3.3 µm.