Premium
Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K
Author(s) -
Liu AnYao,
Nguyen Hieu T.,
Macdonald Daniel
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600335
Subject(s) - dopant , photoluminescence , boron , materials science , silicon , analytical chemistry (journal) , photoluminescence excitation , spectroscopy , luminescence , doping , optoelectronics , chemistry , physics , environmental chemistry , organic chemistry , quantum mechanics
Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non‐destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant‐related features to the band‐to‐band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm −2 –100 kW cm −2 . Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 10 17 cm −3 and [P] below 8 × 10 16 cm −3 .