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Design and performance of high temperature operating resonant‐cavity photodiodes based on 795 nm‐VCSEL structure
Author(s) -
Zhao Yongming,
Sun Yurun,
He Yang,
Yu Shuzhen,
Dong Jianrong
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600200
Subject(s) - vertical cavity surface emitting laser , optoelectronics , materials science , photodiode , resonant cavity , optics , laser , physics
We present detailed simulated and experimental results on spectral response of high temperature operating resonant‐cavity photodiodes (RCPDs). Room temperature external quantum efficiency (EQE) spectrum shows peaks at resonance wavelength, ground‐state emission, and lower reflectivity position. The EQE is ∼1.25, ∼0.7, and ∼3.75%, respectively, at the above three peak positions, i.e., 793, 778, and 743 nm. The maximum EQE increases from ∼1.25 to ∼18% as incident light angle increasing from 0 to 60°. The bandgap of AlGaAs barrier layer was also obtained by the angle dependence of EQE measurement. The amount of EQE/responsivity peak shift with temperature can be determined to be Δ λ = T × 0.065 nm K −1 , which is consistent with the temperature dependence of CM. The maximum responsivity increases from ∼0.01 to ∼0.19 A W −1 when temperature increasing from 300 to 370 K at −1 V bias. For high temperature operating RCPDs, the EQE/responsivity are largely governed by the total absorption within the active region. The performance of RCPDs can be further improved by increasing the pairs of bottom DBR and optimizing the pairs of top DBR.