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InGaN/GaN quantum well improved by in situ SiN x pretreatment of GaN template
Author(s) -
Huang Demeng,
Wu Zhengyuan,
Fang Zhilai
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600157
Subject(s) - cathodoluminescence , photoluminescence , materials science , quantum well , optoelectronics , in situ , layer (electronics) , wide bandgap semiconductor , luminescence , nanotechnology , laser , optics , chemistry , physics , organic chemistry
In situ SiN x pretreatment was employed to modify the growth behavior and optical properties of InGaN/GaN quantum wells (QWs). With moderate SiN x pretreatment surface smoothness of InGaN/GaN QWs was improved and attributed to enhanced layer growth by Ga surfactant effect. Significant increase of photoluminescence peak intensity and relatively uniform and bright cathodoluminescence images were observed, which were attributed to the improvement in crystalline quality and strain reduction for the InGaN/GaN QWs with moderate SiN x pretreatment.