Premium
Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films
Author(s) -
Tokuda Norio,
Ogura Masahiko,
Matsumoto Tsubasa,
Yamasaki Satoshi,
Inokuma Takao
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600082
Subject(s) - misorientation , hillock , diamond , materials science , chemical vapor deposition , substrate (aquarium) , morphology (biology) , crystallography , optoelectronics , nanotechnology , composite material , chemistry , microstructure , grain boundary , geology , paleontology , oceanography
We studied the influence of misorientation angles and directions of single crystal diamond (111) substrates on the surface morphology of homoepitaxial diamond (111) films grown by microwave plasma‐enhanced chemical vapor deposition (CVD) in the anisotropic lateral growth mode. Hillocks were completely suppressed on the diamond (111) films grown by CVD on the substrates with misorientation angles of 2° and 4°, while hillocks were formed on the CVD‐grown diamond (111) films on the substrates with misorientation angles of 0° and 1°. In addition, an atomically flat diamond (111) film was grown on the substrate with a misorientation angle of 2° toward the〈 1 ¯1 ¯ 2 〉direction, while rough films were grown on the substrate with a misorientation angle of 2° toward the 〈 11 2 ¯ 〉 direction.