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Integrated low‐temperature process for the fabrication of amorphous Si nanoparticles embedded in Al 2 O 3 for non‐volatile memory application
Author(s) -
Ilse Klemens,
Schneider Thomas,
Ziegler Johannes,
Sprafke Alexander,
Wehrspohn Ralf B.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600064
Subject(s) - materials science , fabrication , atomic layer deposition , nanoparticle , amorphous solid , silicon , oxide , layer (electronics) , nanotechnology , silicon oxide , chemical vapor deposition , amorphous silicon , process (computing) , chemical engineering , optoelectronics , crystalline silicon , metallurgy , crystallography , chemistry , silicon nitride , medicine , alternative medicine , pathology , computer science , engineering , operating system
A new low‐temperature, integrated fabrication process for multi layers of silicon nanoparticles (Si‐NPs) embedded in amorphous Al 2 O 3 is presented. For this, a non‐thermal low‐pressure inductively coupled plasma process (LPICP) for Si‐NPs and thermal atomic layer deposition (ALD) of Al 2 O 3 are combined. Storage characteristics of metal–oxide–semiconductor (MOS) structures are studied for non‐volatile memory application. The influence of typical fixed oxide charges in Al 2 O 3 on the programming process and retention is investigated. HAADF and EDX images of MOS structure with five layers of silicon nanoparticles.