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The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content
Author(s) -
Li X.,
Zhao D. G.,
Jiang D. S.,
Chen P.,
Liu Z. S.,
Zhu J. J.,
Yang J.,
Liu W.,
He X. G.,
Li X. J.,
Liang F.,
Zhang L. Q.,
Liu J. P.,
Yang H.
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600013
Subject(s) - materials science , optoelectronics , quantum well , indium , diode , laser , electron , leakage (economics) , optics , physics , quantum mechanics , economics , macroeconomics
The effects of Al composition in p‐type AlGaN electron blocking layer (EBL) on electron leakage and device performance in InGaN‐based quantum well (QW) laser diodes (LDs) are numerically investigated in connection with the depth of QWs. It is found that the effectiveness of EBL in blocking electron leakage depends much on Al content in EBL and In content in InGaN QWs. It is effective for low‐In‐content InGaN QW LDs to add moderate Al in AlGaN EBL, while it is hardly helpful and even harmful for high‐In‐content InGaN QW LDs to increase Al content. In addition, it is found that too much Al in EBL is unfavorable for all LDs due to the downward conduction band‐bending in the last quantum barrier (LQB) layer.