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20% efficient n‐type Cz‐Si MWT solar cells with adjustable reverse behavior
Author(s) -
Lohmüller Elmar,
Werner Sabrina,
Maus Stephan,
Brand Andreas,
Jäger Ulrich,
Clement Florian
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600010
Subject(s) - dopant , materials science , doping , silicon , optoelectronics , reverse bias , crystalline silicon , diode
We present 6‐inch n‐type Cz‐Si metal wrap through (MWT) solar cells with screen‐printed and fired contacts achieving energy conversion efficiencies up to 20.4%. These so‐called n‐type high‐performance MWT (n‐HIP‐MWT) structures feature different rear side configurations at the external p‐type contacts with respect to the phosphorus‐doped back surface field (BSF). It is shown that the alteration of the phosphorus dopant concentration at the silicon surface below the external rear p‐type contacts allows for both decreasing reverse‐bias‐induced losses and adjusting the current flowing in reverse mode.