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Low‐temperature grown indium oxide nanowire‐based antireflection coatings for multi‐crystalline silicon solar cells
Author(s) -
Wang YuCian,
Chen ChihYao,
Kuo ChengWen,
Kuan TaMing,
Yu ChengYeh,
Chen IChen
Publication year - 2016
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201600005
Subject(s) - materials science , indium , electron cyclotron resonance , nanowire , optoelectronics , layer (electronics) , silicon , nanocrystal , crystalline silicon , oxide , nanotechnology , plasma , metallurgy , physics , quantum mechanics
Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi‐crystalline silicon (mc‐Si) solar cells has been investigated. The low‐temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O 2 –Ar system using indium nanocrystals as seed particles via the self‐catalyzed growth mechanism. The size‐dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short‐circuit current (from 35.39 to 38.33 mA cm −2 ) without deterioration of other performance parameters is observed for mc‐Si solar cells coated with InO NWs.